quartz substrate中文是什么意思

• 石英衬底

• "quartz"中文翻译    n. 【矿物】石英，水晶。 milky quartz 乳 ...
• "substrate"中文翻译    n. 1.底层，地层。 2.【无线电】(半导体工艺中的) ...
• "substrate" 中文翻译 :    n. 1.底层，地层。 2.【无线电】(半导体工艺中的)衬底，基底。 3.【生物学】(生态学中的)基层；【生物化学】受质；被酶作用物。
• "quartz" 中文翻译 :    n. 【矿物】石英，水晶。 milky quartz 乳石英。 smoky quartz 烟水晶。 violet quartz 紫石英。 water quartz 泡水晶。
• "active substrate" 中文翻译 :    有源衬底; 有源基片，有源衬片，有源基底
• "alternative substrate" 中文翻译 :    错配底物
• "alumina substrate" 中文翻译 :    氧化铝基片
• "beryllia substrate" 中文翻译 :    氧化铍衬底
• "bulk substrate" 中文翻译 :    大块衬底
• "carbonizable substrate" 中文翻译 :    可碳化的基质
• "casein substrate" 中文翻译 :    干酪素基质; 干酪素培养基
• "casting substrate" 中文翻译 :    流延用底基
• "ceramic substrate" 中文翻译 :    陶瓷衬底; 陶瓷基片; 陶瓷基质
• "channeled substrate" 中文翻译 :    开槽底板
• "chromogenic substrate" 中文翻译 :    显色底物，生色底物
• "chromophoric substrate" 中文翻译 :    生色底物
• "circuit substrate" 中文翻译 :    电路衬底
• "coated substrate" 中文翻译 :    贴面基材
• "coating substrate" 中文翻译 :    基体涂层; 涂布基材
• "common substrate" 中文翻译 :    共衬底
• "complementary substrate" 中文翻译 :    互补衬底
• "composite substrate" 中文翻译 :    复合衬底
• "computer to substrate" 中文翻译 :    计算机到承印物
• "concentration of substrate" 中文翻译 :    底物浓度
• "conducting substrate" 中文翻译 :    导电衬底

• Different nitridation programs have produced straight and smooth gan nanowires and herringbone gan nanowires on quartz substrates , respectively
  我们通过改变氮化程序，分别在石英衬底上合成了平直的gan纳米线和鱼骨形gan纳米线。
• In this paper , high quality transparent and conductive al - doped zno thin films on quartz substrates are prepared by electron beam evaporation technique
  本文采用电子束蒸发方法在石英衬底上制备出质量较好的al掺杂的zno薄膜材料。
• The spin - coated films are single - phase and highly oriented with the c - axis perpendicular to the quartz substrates . this type of materials has good thermal stability , and their decomposition points are near 300 c
  旋涂法沉积的该类材料的薄膜具有较好的单相结构，材料成膜后，其单相晶体的c轴很好地垂直于石英基片表面。
• The prototype is made by a concave sphere primary and a plane secondary deposited the mo / si multilayer on the fused quartz substrates . the reflectivity peak and the reflectivity uniformity of the multilayer mirrors are respectively 25 % and around + 2 . 5 % at 17 . 1nm
  望远镜主镜为球面，次镜为平面，所用反射镜为在熔石英基底上镀制mo si多层膜的euv波段反射镜，在17 . 1nm的反射率25 ，反射率的均匀性2 . 5 。
• 2 . the optical transmission spectra of batio3 thin films annealed at different temperatures on fused quartz substrates are measured . the bandgap energies calculated from their optical transmission spectra are larger than that of single crystals reported in the literatures , whereas for poor - crystallized films with lower annealing temperature , their bandgap energy values are much larger than that of single crystals
  发现batio3多晶薄膜的光学带隙大于文献报导的单晶薄膜的光学带隙,对于结晶性好的薄膜,其光学带隙接近于单晶值,退火温度越低,结晶性越差,与单晶的光学带隙相差越大。
• The morphologies of one - dimensional gan nano structures were affected greatly by substrates . we can get different one - dimensional gan nano structures by choosing different substrates . among the products , smooth and straight gan nanowires on quartz substrates , long and transparent gan nanobelts on sapphire substrates , short gan nanorods on si substrates and gan nanopoles on gaas substrates were found , respectively
  我们可以通过选择不同的衬底来分别合成形态不同的一维gan纳米结构，其中在石英衬底上合成的是平直的gan纳米线，在蓝宝石衬底上合成的是细长透明的gan纳米带，在gaas衬底上合成的是柱状的一维gan纳米结构，而在以衬底上合成的是粗短的gan纳米棒。
• In the " card - packing " , a znf16pc molecule takes an angle of 52 respect to the substrate . while in the " brick - stacking " , the molecules arrange in a square lattice with lattice constant as 14 . 94a and 14 . 28a under room temperature and 300 respectively . from room temperature to about 150 , f - ptcdi molecules follow the vollmer - weber rule when grown on quartz substrate , as revealed by afm images
  在“ card - packing ”模式中，分子平面与石英衬底平面成52左右的二面角；在“ brick - stacking ”模式中，较低温度下，分子以四方点阵平行排列，点阵常数为14 . 94 ；在300的衬底温度下发生构象调整，点阵常数减小为14 . 28 ，分子采取更高密度的堆积方式。
• Two sources of si were identified . one was from the sif62 - ions , which were formed by a reaction between the treatment solution and quartz substrate . the other was attributed to the diffusion of si from the surface of quartz substrate into tio2 thin film at 700 c or higher calcination temperatures
  薄膜中的si元素来源于二部分，其中一部分来源于反应液与石英玻璃基片反应所生成的[ sif _ 6 ] ~ ( 2 - )离子，另一部分则来自于薄膜在高温热处理( 700或高于700 )过程中从石英玻璃表面扩散到薄膜中的si元素。
• The bzt thin film has good properties in high frequency . the essential principle , technology process and advantages of the ba ( zr0 . 3ti0 . 7 ) o3 ( bzt ) ferroelectric thin films grown on pt / ti / sio2 / si substrates and quartz substrates by sol - gel process are introduced . the heat - treatment technology was fixed according to the dsc - tg measurement , afm ( atomic force microscope ) and fe - sem ( field emission - scanning electrical microscope )
  我们通过在pt / ti / sio2 / si衬底和石英衬底上制备ba ( zr0 . 3ti0 . 7 ) o3铁电薄膜,了解了溶胶-凝胶法( sol - gel )制备薄膜的基本原理、工艺过程及工艺特点;并对所制得的ba ( zr0 . 3ti0 . 7 ) o3薄膜的前驱体溶液和干凝胶进行了差热与热失重( dsc - tg )分析,确定了溶胶在热处理各个阶段的反应情况。
• Znf16pc molecules grow on quartz substrate in a stransky - krastanov model ; a fundamental layer is laid by strong interactions between quartz and f - atoms on znf16pc , on which an amorphous transition layer develops , finally an well ordered film is obtained , " card - packing " , " amorphous accumulation " and " brick - stacking " are adopted hi three different layers
  Znf _ ( 16 ) pc分子在石英衬底上的生长基本符合stransky - krastanov模型：通过f -原子与石英衬底的强相互作用形成奠基层，发展成无定型的过渡层，最后形成有序的结晶层。在这三个区域内分子分别采取“ card - packing ” 、 “ amorphousaccumulation ”和“ brick - stacking ”排列方式。